A. M. Wowchak : rechercher sur Z-Library

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1

Development of enhancement mode AlN/GaN high electron mobility transistors

Chang, C. Y., Pearton, S. J., Lo, C. F., Ren, F., Kravchenko, I. I., Dabiran, A. M., Wowchak, A. M., Cui, B., Chow, P. P.

Journal:

Applied Physics Letters

Année:

2009

Langue:

english

Fichier:

PDF, 462 KB

english, 2009

2

Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

Dabiran, A. M., Wowchak, A. M., Osinsky, A., Xie, J., Hertog, B., Cui, B., Look, D. C., Chow, P. P.

Journal:

Applied Physics Letters

Année:

2008

Langue:

english

Fichier:

PDF, 536 KB

english, 2008

3

Dependence of structural and electrical properties of AlGaN/GaN HEMT on Si(111) on buffer growth conditions by MBE

Mukhopadhyay, Partha, Chowdhury, Subhra, Wowchak, Andrew, Dabiran, Amir, Chow, Peter, Biswas, Dhrubes

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Année:

2013

Langue:

english

Fichier:

PDF, 1.41 MB

english, 2013

4

Ti/Al/Mo/Au Ohmic contacts to all-binary AlN/GaN high electron mobility transistors

Wang, Liang, Adesida, Ilesanmi, Dabiran, Amir M., Wowchak, Andrew M., Chow, Peter P.

Journal:

Applied Physics Letters

Année:

2008

Langue:

english

Fichier:

PDF, 605 KB

english, 2008

5

Passivation of AlN∕GaN high electron mobility transistor using ozone treatment

Lo, C. F., Chang, C. Y., Pearton, S. J., Kravchenko, I. I., Dabiran, A. M., Wowchak, A. M., Cui, B., Chow, P. P., Ren, F.

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Année:

2010

Langue:

english

Fichier:

PDF, 624 KB

english, 2010

6

Electrical and structural properties of AlN/GaN and AlGaN/GaN heterojunctions

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Yugova, T. G., Dabiran, A. M., Wowchak, A. M., Cui, B., Osinsky, A. V., Chow, P. P., Pearton, S. J., Scherbatchev, K. D., Bublik, V. T.

Journal:

Journal of Applied Physics

Année:

2008

Langue:

english

Fichier:

PDF, 774 KB

english, 2008

7

III-N light emitting diodes fabricated using RF nitrogen gas source MBE

J.M. Van Hove, G. Carpenter, E. Nelson, A. Wowchak, P.P. Chow

Journal:

Journal of Crystal Growth

Année:

1996

Langue:

english

Fichier:

PDF, 305 KB

english, 1996

8

(111) InAs/GaInSb strained-layer superlattice growth investigation

D.A. Reich, A.M. Wowchak, P.P. Chow, J.M. Van Hove

Journal:

Journal of Crystal Growth

Année:

1995

Langue:

english

Fichier:

PDF, 271 KB

english, 1995

9

GaN growth by a controllable RF-excited nitrogen source

J.M. Van Hove, G.J. Cosimini, E. Nelson, A.M. Wowchak, P.P. Chow

Journal:

Journal of Crystal Growth

Année:

1995

Langue:

english

Fichier:

PDF, 269 KB

english, 1995

10

Sensor controlled linear motion oven (S-LIMO) for group III flux operation

P.P. Chow, K.R. Evans, A.J. SpringThorpe, P. Fisher, J.J. Klaassen, A. Wowchak, J. Van Hove

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 385 KB

english, 1997

11

Optimization of AlGaN films grown by RF atomic nitrogen plasma using in-situ cathodoluminescence

J.M. Van Hove, P.P. Chow, A.M. Wowchak, J.J. Klaassen, M.F. Rosamond, D.R. Croswell

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 426 KB

english, 1997

12

MBE grown AlGaN/GaN MODFETs with high breakdown voltage

A. Vescan, R. Dietrich, A. Wieszt, H. Tobler, H. Leier, J.M. Van Hove, P.P. Chow, A.M. Wowchak

Journal:

Journal of Crystal Growth

Année:

1999

Langue:

english

Fichier:

PDF, 214 KB

english, 1999

13

Simulation of GaN/AlGaN heterojunction bipolar transistors: part I – npn structures

X.A Cao, J.M Van Hove, J.J Klaassen, C.J Polley, A.M Wowchak, P.P Chow, D.J King, A.P Zhang, G Dang, C Monier, S.J Pearton, F Ren

Journal:

Solid-State Electronics

Année:

2000

Langue:

english

Fichier:

PDF, 206 KB

english, 2000

14

Simulation of GaN/AlGaN heterojunction bipolar transistors: part II – pnp structures

X.A Cao, J.M Van Hove, J.J Klaassen, C.J Polley, A.M Wowchak, P.P Chow, D.J King, A.P Zhang, G Dang, C Monier, S.J Pearton, F Ren

Journal:

Solid-State Electronics

Année:

2000

Langue:

english

Fichier:

PDF, 173 KB

english, 2000

15

GaN PN junction issues and developments

R Hickman, J.M Van Hove, P.P Chow, J.J Klaassen, A.M Wowchak, C.J Polley, D.J King, F Ren, C.R Abernathy, S.J Pearton, K.B Jung, H Cho, J.R La Roche

Journal:

Solid-State Electronics

Année:

2000

Langue:

english

Fichier:

PDF, 227 KB

english, 2000

16

Detection of vitellogenin, an endocrine disrupter biomarker, using AlGaN/GaN high electron mobility transistors

Byung Hwan Chu, C. Y. Chang, Kevin Kroll, Nancy Denslow, Yu-Lin Wang, S. J. Pearton, Jenshan Lin, A. M. Dabiran, A. M. Wowchak, B. Cui, P. P. Chow, J. W. Johnson, P. Rajagopal, J. C. Roberts, E. L. Pi

Journal:

physica status solidi (c)

Année:

2011

Langue:

english

Fichier:

PDF, 321 KB

english, 2011

17

A study of the electrical characteristics of various metals on p-type GaN for ohmic contacts

A. K. Fung, J. E. Borton, M. I. Nathan, J. M. Van Hove, R. Hickman, P. P. Chow, A. M. Wowchak

Journal:

Journal of Electronic Materials

Année:

1999

Langue:

english

Fichier:

PDF, 200 KB

english, 1999

18

On the origin of RHEED intensity oscillations

G.S. Petrich, P.R. Pukite, A.M. Wowchak, G.J. Whaley, P.I. Cohen, A.S. Arrott

Journal:

Journal of Crystal Growth

Année:

1989

Langue:

english

Fichier:

PDF, 449 KB

english, 1989

19

Enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes by hydrogen plasma treatment

S. G. Zhang, X. W. Zhang, J. X. Wang, J. B. You, Z. G. Yin, J. J. Dong, B. Cui, A. M. Wowchak, A. M. Dabiran, P. P. Chow

Journal:

physica status solidi (RRL) - Rapid Research Letters

Année:

2011

Langue:

english

Fichier:

PDF, 218 KB

english, 2011

20

Epitaxy of FeAl films on GaAs(100) by molecular beam epitaxy

J. N. Kuznia, A. M. Wowchak, P. I. Cohen

Journal:

Journal of Electronic Materials

Année:

1990

Langue:

english

Fichier:

PDF, 1.26 MB

english, 1990

21

Growth and characterization of iron aluminide films on compound semiconductors

R. R. Keller, A. M. Wowchak, J. E. Angelo, J. N. Kuznia, P. I. Cohen, W. W. Gerberich

Journal:

Journal of Electronic Materials

Année:

1991

Langue:

english

Fichier:

PDF, 1.22 MB

english, 1991

22

Injection and Avalanche Electroluminescence of Multiple Quantum Wells

Sheng-Kun Zhang, Wubao Wang, Alfano, R.R., Dabiran, A.M., Osinsky, A., Wowchak, A.M., Hertog, B., Chow, P.P.

Journal:

IEEE Journal of Selected Topics in Quantum Electronics

Année:

2008

Langue:

english

Fichier:

PDF, 175 KB

english, 2008

23

Exchange effects in molecular‐beam‐epitaxy grown iron films

Chen, YouJun, Lottis, Daniel K., Dahlberg, E. Dan, Kuznia, J. N., Wowchak, A. M., Cohen, P. I.

Journal:

Journal of Applied Physics

Année:

1991

Langue:

english

Fichier:

PDF, 579 KB

english, 1991

24

Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin Al2O3 formed by thermal oxidation of evaporated aluminium

Taking, S., Banerjee, A., Zhou, H., Li, X., Khokhar, A.Z., Oxland, R., McGregor, I., Bentley, S., Rahman, F., Thayne, I., Dabiran, A.M., Wowchak, A.M., Cui, B., Wasige, E.

Journal:

Electronics Letters

Année:

2010

Langue:

english

Fichier:

PDF, 208 KB

english, 2010

25

Proceedings of SPIE [SPIE Gallium Nitride Materials and Devices VII - San Francisco, California, USA (Monday 23 January 2012)] - Effects of polarization fields on avalanche breakdown of AlGaN quantum-well photodiode

Zhang, Sheng-Kun, Wang, Wubao, Alfano, Robert R., Dabiran, Amir M., Wowchak, Andrew M., Chow, Peter P.

Année:

2012

Langue:

english

Fichier:

PDF, 178 KB

english, 2012

26

Deep traps responsible for hysteresis in capacitance-voltage characteristics of AlGaNâGaN heterostructure transistors

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Dabiran, A. M., Wowchak, A. M., Osinsky, A. V., Cui, B., Chow, P. P., Pearton, S. J.

Journal:

Applied Physics Letters

Année:

2007

Langue:

english

Fichier:

PDF, 374 KB

english, 2007

27

Electron irradiation of AlGaNâGaN and AlNâGaN heterojunctions

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Pearton, S. J., Dabiran, A. M., Wowchak, A. M., Cui, B., Osinsky, A. V., Chow, P. P., Kolin, N. G., Boiko, V. M., Merkurisov, D. I.

Journal:

Applied Physics Letters

Année:

2008

Langue:

english

Fichier:

PDF, 519 KB

english, 2008

28

High-Performance AlN/GaN HEMTs on Sapphire Substrate With an Oxidized Gate Insulator

Chabak, Kelson D., Walker, Dennis E., Johnson, Michael R., Crespo, Antonio, Dabiran, Amir M., Smith, David J., Wowchak, Andrew M., Tetlak, Stephen K., Kossler, Mauricio, Gillespie, James K., Fitch, Ro

Journal:

IEEE Electron Device Letters

Année:

2011

Langue:

english

Fichier:

PDF, 333 KB

english, 2011

29

Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer

Zhang, S. G., Zhang, X. W., Yin, Z. G., Wang, J. X., Dong, J. J., Wang, Z. G., Qu, S., Cui, B., Wowchak, A. M., Dabiran, A. M.

Journal:

Journal of Applied Physics

Année:

2011

Langue:

english

Fichier:

PDF, 3.33 MB

english, 2011

30

Ordinary optical dielectric functions of anisotropic hexagonal GaN film determined by variable angle spectroscopic ellipsometry

Yan, C. H., Yao, H., Van Hove, J. M., Wowchak, A. M., Chow, P. P., Zavada, J. M.

Journal:

Journal of Applied Physics

Année:

2000

Langue:

english

Fichier:

PDF, 402 KB

english, 2000

31

AlGaN∕InGaN HEMTs for RF current collapse suppression

Lanford, W., Kumar, V., Schwindt, R., Kuliev, A., Adesida, I., Dabiran, A.M., Wowchak, A.M., Chow, P.P., Lee, J.-W.

Journal:

Electronics Letters

Année:

2004

Langue:

english

Fichier:

PDF, 215 KB

english, 2004

32

Layer by layer growth of FeAl on InP(100) substrates

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Année:

1989

Langue:

english

Fichier:

PDF, 618 KB

english, 1989

33

Bias-assisted photoelectrochemical etching of p-GaN at 300 K

Borton, J. E., Cai, C., Nathan, M. I., Chow, P., Van Hove, J. M., Wowchak, A., Morkoc, H.

Journal:

Applied Physics Letters

Année:

2000

Langue:

english

Fichier:

PDF, 567 KB

english, 2000

34

Simultaneous in-plane Kerr effects in Fe/GaAs (110) thin films

Florczak, J. M., Dahlberg, E. Dan, Kuznia, J. N., Wowchak, A. M., Cohen, P. I.

Journal:

Journal of Applied Physics

Année:

1991

Langue:

english

Fichier:

PDF, 597 KB

english, 1991

35

Conductivity and Hall-effect in highly resistive GaN layers

Kordoš, P., Javorka, P., Morvic, M., Betko, J., Van Hove, J. M., Wowchak, A. M., Chow, P. P.

Journal:

Applied Physics Letters

Année:

2000

Langue:

english

Fichier:

PDF, 295 KB

english, 2000

36

Avalanche breakdown and breakdown luminescence of AlGaN multiquantum wells

S. K. Zhang, W. B. Wang, A. M. Dabiran, A. Osinsky, A. M. Wowchak, B. Hertog, C. Plaut, P. P. Chow, S. Gundry, E. O. Troudt, R. R. Alfano

Année:

2005

Langue:

english

Fichier:

PDF, 327 KB

english, 2005

37

Electrical and optical properties of modulation-doped p-AlGaN/GaN superlattices

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Osinsky, P. E. Norris, S. J. Pearton, J. Van Hove, A. Wowchak, P. Chow

Année:

2001

Langue:

english

Fichier:

PDF, 292 KB

english, 2001

38

Identification of the misfit dislocations at an FeAl/AlAs/GaAs interface using moiré fringe contrast in a transmission electron microscope

Angelo, J. E., Kuznia, J. N., Wowchak, A. M., Cohen, P. I., Gerberich, W. W.

Journal:

Applied Physics Letters

Année:

1991

Langue:

english

Fichier:

PDF, 788 KB

english, 1991

39

Electrical and optical properties of Fe doped AlGaN grown by molecular beam epitaxy

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, A. M. Dabiran, P. P. Chow, A. M. Wowchak, S. J. Pearton

Année:

2010

Langue:

english

Fichier:

PDF, 586 KB

english, 2010

40

Conductivity and Hall effect characterization of highly resistive molecular-beam epitaxial GaN layers

P. Kordoš, M. Morvic, J. Betko, J. M. Van Hove, A. M. Wowchak, P. P. Chow

Année:

2000

Langue:

english

Fichier:

PDF, 452 KB

english, 2000

41

Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, P. P. Chow

Année:

2010

Langue:

english

Fichier:

PDF, 541 KB

english, 2010

42

Detection of an endocrine disrupter biomarker, vitellogenin, in largemouth bass serum using AlGaN/GaN high electron mobility transistors

Chu, Byung Hwan, Chang, C. Y., Kroll, Kevin, Denslow, Nancy, Wang, Yu-Lin, Pearton, S. J., Dabiran, A. M., Wowchak, A. M., Cui, B., Chow, P. P., Ren, Fan

Journal:

Applied Physics Letters

Année:

2010

Langue:

english

Fichier:

PDF, 473 KB

english, 2010

43

Magnetic properties of molecular-beam epitaxial grown (100) iron films

Lottis, D. K., Florczak, J., Dahlberg, E. Dan, Batra, S., Wowchak, A. M., Cohen, P. I.

Journal:

Journal of Applied Physics

Année:

1988

Langue:

english

Fichier:

PDF, 528 KB

english, 1988

44

Comparison of electrical properties and deep traps in p-Al[sub x]Ga[sub 1−x]N grown by molecular beam epitaxy and metal organic chemical vapor deposition

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Kozhukhova, E. A., Dabiran, A. M., Chow, P. P., Wowchak, A. M., Lee, In-Hwan, Ju, Jin-Woo, Pearton, S. J.

Journal:

Journal of Applied Physics

Année:

2009

Langue:

english

Fichier:

PDF, 778 KB

english, 2009

45

Electrical properties of GaN (Fe) buffers for AlGaN∕GaN high electron mobility transistor structures

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Yugova, T. G., Markov, A. V., Dabiran, A. M., Wowchak, A. M., Cui, B., Xie, J., Osinsky, A. V., Chow, P. P., Pearton, S. J.

Journal:

Applied Physics Letters

Année:

2008

Langue:

english

Fichier:

PDF, 388 KB

english, 2008

46

Recessed 70-nm Gate-Length AlGaN/GaN HEMTs Fabricated Using an $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{SiN}_{x}$ Dielectric Layer

Donghyun Kim,, Kumar, V., Jaesun Lee,, Minjun Yan,, Dabiran, A.M., Wowchak, A.M., Chow, P.P., Adesida, I.

Journal:

IEEE Electron Device Letters

Année:

2009

Langue:

english

Fichier:

PDF, 235 KB

english, 2009

47

Substrate modified growth of epitaxial Fe films (abstract)

Batra, S., Wowchak, A. M., Cohen, P. I., Lottis, D. K., Dahlberg, E. D.

Journal:

Journal of Applied Physics

Année:

1988

Langue:

english

Fichier:

PDF, 270 KB

english, 1988

48

Semi-Insulating, Fe-Doped Buffer Layers Grown by Molecular Beam Epitaxy

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Yugova, T. G., Petrova, E. A., Dabiran, A. M., Wowchak, A. M., Osinsky, A. V., Chow, P. P., Pearton, S. J., Shcherbatchev, K. D., Bubli

Journal:

Journal of The Electrochemical Society

Année:

2007

Langue:

english

Fichier:

PDF, 221 KB

english, 2007

49

Low-voltage Avalanche Breakdown in AlGaN Multi-quantum Wells

Zhang, Shengkun, Zhou, X., Wang, Wubao, Alfano, R. R., Dabiran, A. M., Osinky, A., Wowchak, A. M., Hertog, B., Plaut, C., Chow, P. P.

Journal:

MRS Proceedings

Année:

2006

Langue:

english

Fichier:

PDF, 41 KB

english, 2006

50

SMALL SIGNAL AND DC CHARACTERISTICS OF ULTRA-THIN GaN/AlN/GaN HFETs

CHABAK, KELSON D., WALKER, DENNIS E., CRESPO, ANTONIO, TREJO, MANUEL, KOSSLER, MAURICIO, TETLAK, STEVE, GILLESPIE, JAMES K., FITCH, ROBERT C., VIA, GLEN D., DABIRAN, AMIR, WOWCHAK, A.M., CHOW, P.P.

Journal:

International Journal of High Speed Electronics and Systems

Année:

2011

Langue:

english

Fichier:

PDF, 1.91 MB

english, 2011